SQ2308BES

SQ2308BES Automotive N-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-236 (SOT-23) 60 0.170 0.220 2.3 Single D FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC G 1 3 D S 2 G Top View SQ2308BES (8U)* * Marking Code S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free SOT-23 SQ2308BES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) Pulsed Drain Currenta L = 0.1 mH TC = 25 °C TC = 125 °C Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range TC = 25 °C TC = 125 °C SYMBOL VDS VGS ID IS IDM IAS EAS PD TJ, Tstg LIMIT 60 ± 20 2.3 1.3 2.5 9 6 1.8 2 0.6 - 55 to + 175 mJ W °C A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mountb SYMBOL RthJA RthJF LIMIT 175 75 UNIT °C/W 1 / 10 www.freescale.net.cn Free Datasheet http://www.datasheet4u.com/ SQ2308BES Automotive N-Channel 60 V (D-S) 175 °C MOSFET SPECIFICATIONS (TC = 25 °C...