UPA2816T1S

Data Sheet μPA2816T1S P-channel MOSFET –30 V, –17 A, 15.5 mΩ Description The μPA2816T1S is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0778EJ0101 Rev.1.01 May 28, 2013 Features VDSS = −30 V (TA = 25°C) Low on-state resistance ⎯ RDS(on) = 15.5 mΩ MAX. (VGS = −10 V, ID = −17 A) 4.5 V Gate-drive available Small & thin type surface mount package with heat spreader Pb-free and Halogen free HWSON-8 Ordering Information Part No. LEAD PLATING Pure Sn PACKING Tape 5000 p/reel HWSON-8 typ. 0.022 g Package μPA2816T1S-E2-AT ∗1 Note: ∗ 1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation ∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings −30 −25 / +20 m17 m68 1.5 3.8 12 150 −55 to +150 17 28.9 Unit V V A A W W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Channel to Case (Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.3 10.4 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗ 3. St...