UPA2813T1L

Data Sheet μPA2813T1L P-channel MOSFET –30 V, –27 A, 6.2 mΩ Description The μPA2813T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment. R07DS0763EJ0102 Rev.1.02 May. 28, 2013 Features VDSS = −30 V (TA = 25°C) Low on-state resistance ⎯ RDS(on) = 6.2 mΩ MAX. (VGS = −10 V, ID = −27 A) 4.5 V Gate-drive available Small & thin type surface mount package with heat spreader Pb-free and Halogen free 8-pin HVSON(3333) Ordering Information Part No. Lead Plating Pure Sn Packing Tape 3000 p/reel μPA2813T1L-E2-AT ∗1 Note: ∗ Package 8-pin HVSON (3333) typ. 0.028 g 1. Pb-free (This product does not contain Pb in external electrode and other parts.) Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) 1 Drain Current (pulse) ∗ 2 Total Power Dissipation ∗ Total Power Dissipation (PW = 10 sec) Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature 3 Single Avalanche Current ∗ 3 Single Avalanche Energy ∗ Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings −30 m20 m27 m108 1.5 3.8 52 150 −55 to +150 23 54 Unit V V A A W W W °C °C A mJ ∗2 Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Channel to Case (Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.3 2.4 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm...