UPA2763

Preliminary Data Sheet μ PA2763 MOS FIELD EFFECT TRANSISTOR Description R07DS0003EJ0100 Rev.1.00 May 31, 2010 The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications. Features Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A) Low Ciss 2100 pF TYP. Built-in gate protection diode Thin type surface mount package with heat spreader (8-pin HVSON) RoHS Compliant Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation∗2 Total Power Dissipation (PW = 10 sec) ∗2 Total Power Dissipation (TC = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗3 Single Avalanche Energy ∗3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 PT3 Tch Tstg IAS EAS Ratings 100 ±20 ±42 ±84 1.5 4.6 83 150 -55 to + 150 24.7 61.0 Unit V V A A W W W °C °C A mJ Thermal Resistance Channel to Ambient Thermal Resistance ∗2 Channel to Case (Drain) Thermal Resistance Rth(ch-A) Rth(ch-C) 83.3 1.5 °C/W °C/W Notes: ∗1. PW ≤ 10 μ s, Duty Cycle ≤ 1% ∗ 2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt ∗ 3. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, L = 100 μ H, VGS = 20→0 V R07DS0003EJ0100 Rev.1.00 May 31, 2010 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ μ PA2763 Chapter Title Electrical Characteris...