UPA2600T1R

Data Sheet μPA2600T1R N-CHANNEL MOSFET 20 V, 7.0 A, 13.8 mΩ Description The μPA2600T1R is N-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 Features High Drain to Source Voltage ⎯ VDSS = 20 V (VGS = 0 V, TA = 25°C) 2.5V drive available Low on-state resistance ⎯ RDS (on)1 = 13.8 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A) ⎯ RDS (on)2 = 19.1 mΩ MAX. (VGS = 2.5 V, ID = 3.5 A) Built-in gate protection diode Lead-free and Halogen-free 6pinHUSON2020 Ordering Information Part Number Package 6pinHUSON2020 Note: ∗1.Pb-free (This product does not contain Pb in the external electrode and other parts.) μPA2600T1R-E2-AX∗1 Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25 °C) Drain Current (pulse) ∗1 Total Power Dissipation (5 s) ∗2 Channel Temperature Storage Temperature Symbol VDSS VGSS ID(DC) ID(pulse) PT Tch TSTG Ratings 20 ±12 ±7.0 ±28 2.4 150 –55 to +150 Unit V V A A W °C °C Notes: ∗1. PW≤10 μs, Duty Cycle≤1% ∗2. Mounted on glass epoxy board of 25.4mm x 25.4mm x 0.8mmt R07DS0998EJ0100 Rev.1.00 Jan 15, 2013 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ μPA2600T1R Electrical Characteristics (TA = 25°C) Characteristics Zero Gate Voltage Drain Current Gate...