2SA1937

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications 2SA1937 Unit: mm High voltage: VCEO = −600 V Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −600 −600 −7 −0.5 −1 −0.25 1 10 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― ― Note1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-7B1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.36 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21 Electrical Characteristics (Ta = 25°C) 2SA1937 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacit...