2SA1934

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1934 High-Current Switching Applications DC-DC Converter Applications 2SA1934 Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −3 A) High-speed switching: tstg = 1.0 µs (typ.) Complementary to 2SC5176 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −100 −80 −7 −5 −8 −1 1.8 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-10T1A Weight: 1.5 g (typ.) 1 2004-07-07 2SA1934 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = −100 V, IE = 0 IEBO VEB = −7 V, IC = 0 V (BR) CEO IC = −10 mA, IB = 0 hFE (1) (Note) VCE = −1 V, IC = −1 A hFE (2) VCE (sat) VBE (sat) fT Cob VCE = −1 V, IC = −3 A IC = −3 A, IB = −0.15 A IC = −3 A, IB = −0.15 A VCE = −4 V, IC = −1 A VCB = −10 V, IE = 0, f = 1 MHz Min Typ. Max Unit ― ― −1 µA ― ― −1 µA −80 ― ― V 70 ― 240 40 ― ― ― −0.2 −0.4 V ― −0.9 −1.2 V ― 60 ― MHz ― 200 ― pF Turn-on time ton 20 µs Input IB2 Output ― ...