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2SA1933

Silicon PNP Epitaxial Type Transistor

Description

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1933 2SA1933 High-Current Switching Applications Industrial Applications Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) High-speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC5175 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbo...

Toshiba Semiconductor

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