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RJK5032DPH-E0

High Speed Power Switching

Description

Preliminary Datasheet RJK5032DPH-E0 500V - 3A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 2.1  typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25C)  Low drive current  High speed switching R07DS1039EJ0100 Rev.1.00 Mar 15, 2013 Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) 4 1. 2. 3. 4. Gate Drain Source D...

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RJK5032DPH-E0 High Speed Power Switching - Renesas

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