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2SA1926

Toshiba Semiconductor

Silicon PNP Epitaxial Type Transistor


Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1926 Power Amplifier Applications Power Switching Applications 2SA1926 Unit: mm Low collector saturation voltage: VCE (sat) = −0.17 V (max) (IC = −1 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −80 V Collector-emitter voltage ...



Toshiba Semiconductor

2SA1926

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