RJK4002DPD

RJK4002DPD 400V - 3A - MOS FET High Speed Power Switching Features Low on-state resistance RDS(on) = 2.4 Ω typ. (at ID = 1.5 A, VGS = 10 V, Ta = 25°C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-A (Package name : MP-3A) 4 12 3 G Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID (pulse) Note1 IDR IDR Note1 (pulse) IAP Note2 EAR Note2 Pch Note3 Channel to case thermal Impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. Pulse width limited by safe operating area. 2. STch = 25°C, Tch ≤ 150°C 3. Value at Tc = 25°C Preliminary Datasheet R07DS0835EJ0210 Rev.2.10 Jan 29, 2014 D 1. Gate 2. Drain 3. Source 4. Drain S Value 400 ±30 3 6 3 6 2.5 0.357 30 4.17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C/W °C °C R07DS0835EJ0210 Rev.2.10 Jan 29, 2014 Page 1 of 6 RJK4002DPD Preliminary Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body...