2SA1923

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications 2SA1923 Unit: mm High voltage: VCEO = −400 V Low saturation voltage: VCE (sat) = −1 V (max) (IC = −100 mA, IB = −10 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating −400 −400 −7 −0.5 −1 −0.25 1 10 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-7B1A Weight: 0.36 g (typ.) 1 2005-02-01 2SA1923 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB = −400 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −20 mA VCE = −5 V, IC = −100 mA IC = −100 mA, IB = −10 mA IC = −100 mA, IB = −10 mA VCE = −5 V, IC = −50 mA VCB = −10 V, IE = 0, f = 1 MHz Min Typ. Max ― ― −400 140 140 ― ― ― ― ― ― ― ― ― −0.4 −0.76 35 18 −10 −1 ― 450 400 −1.0 −0.9 ― ― Unit µA µA V V V MHz pF Turn-on time Switching time Storage time Fall time ton 20 µs INPUT IB1 OUTPUT ― 0.2 ― IB1 2 kΩ tst...