IRF9395MTRPBF

PD - 96332A DirectFET™ dual P-Channel Power MOSFET ‚ Typical values (unless otherwise specified) IRF9395MPbF IRF9395MTRPbF RDS(on) Qgs2 3.2nC VDSS Applications l Isolation Switch for Input Power or Battery Application VGS Qgd 15nC RDS(on) Qoss 23nC -30V max ±20V max 5.3mΩ@-10V 9.0mΩ@-4.5V Qg tot 32nC Qrr 62nC Vgs(th) -1.8V Features and Benefits l Environmentaly Friendly Product l RoHs Compliant Containing no Lead, Q1-Q2 G G no Bromide and no Halogen l Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on) Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT D S S S S D MC MP MC DirectFET ™ ISOMETRIC Description The IRF9395MTRPbF combines the latest HEXFET® P-Channel Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. Orderable part number IRF9395MTRPbF IRF9395MTR1PbF Package Type DirectFET Medium Can DirectFET Medium Can Parameter Sta...