IRF9362PBF

PD - 96312 IRF9362PbF HEXFET® Power MOSFET VDS RDS(on) max (@VGS = -10V) -30 21.0 32.0 13 -8.0 V mΩ mΩ nC A S2 1 G 2 2 S1 3 G 1 4 8 D2 7 D2 6 D1 5 D1 RDS(on) max (@VGS = -4.5V) Qg (typical) ID (@TA = 25°C) SO-8 Applications Charge and Discharge Switch for Notebook PC Battery Application Features and Benefits Features Industry-Standard SO-8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen Resulting Benefits results in Multi-Vendor Compatibility Environmentally Friendlier ⇒ Orderable part number IRF9362PbF IRF9362TRPbF Package Type SO8 SO8 Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Note Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Max. -30 ±20 -8.0 -6.4 -64 2.0 1.3 0.016 -55 to + 150 Units V f Power Dissipation f c A W W/°C °C Linear Derating Factor Operating Junction and Storage Temperature Range Notes  through † are on page 2 www.irf.com 1 06/25/10 Free Datasheet http://www.datasheet4u.com/ IRF9362PbF Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qg Qgs Qgd RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold V...