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2SA1908 Dataheets PDF



Part Number 2SA1908
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon PNP Transistor
Datasheet 2SA1908 Datasheet2SA1908 Datasheet (PDF)

2SA1908 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO –120 V VCEO –120 V VEBO –6 V IC –8 A IB –3 A PC 75(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings Unit ICBO VCB=–120V –10max µA IEBO VEB=–6V –10max µA V(BR)CEO IC=–50mA –120min V hFE VCE=–4V, IC=–3A 50min∗ VCE(sat.

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2SA1908 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC5100) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO –120 V VCEO –120 V VEBO –6 V IC –8 A IB –3 A PC 75(Tc=25°C) W Tj 150 °C Tstg –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol Conditions Ratings Unit ICBO VCB=–120V –10max µA IEBO VEB=–6V –10max µA V(BR)CEO IC=–50mA –120min V hFE VCE=–4V, IC=–3A 50min∗ VCE(sat) IC=–3A, IB=–0.3A –0.5max V fT VCE=–12V, IE=0.5A 20typ MHz COB VCB=–10V, f=1MHz 300typ pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) –40 10 –4 –10 5 –0.4 IB2 ton tstg tf (A) (µs) (µs) (µs) 0.4 0.14typ 1.40typ 0.21typ External Dimensions FM100(TO3PF) 15.6±0.2 5.5±0.2 3.45 ±0.2 0.8±0.2 5.5 23.0±0.3 9.5±0.2 16.2 ø3.3±0.2 a b 3.0 1.6 3.3 5.45±0.1 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 6.5g a. Part No. B C E b. Lot No. Collector Current IC(A) –350mA I C– V CE Characteristics (Typical) –8 –200mA –150mA –100mA –6 –75mA –50mA –4 –25mA –2 IB=–10mA 0 0 –1 –2 –3 –4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) –3 I C– V BE Temperature Characteristics (Typical) (VCE=–4V) –8 Collector Current IC(A) 215˚25C˚(CC(aCsaesTeeTmep)mp) –30˚C (Case Temp) –2 –1 IC=–8A –4A –2A 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base Current IB(A) –6 –4 –2 0 0 –0.5 –1.0 –1.5 Base-Emittor Voltage VBE(V) DC Current Gain hFE Transient Thermal Resistance θ j-a( ˚ C / W ) DC Current Gain hFE h FE– I C Characteristics (Typical) (VCE=–4V) 200 Typ 100 h FE– I C Temperature Characteristics (Typical) (VCE=–4V) 300 125˚C 25˚C 100 –30˚C 50 50 θ j-a– t Characteristics 4 1 0.5 30 –0.02 –0.1 –0.5 –1 Collector Current IC(A) –5 –8 30 –0.02 –0.1 –0.5 –1 Collector Current IC(A) –5 –8 0.2 1 10 100 Time t(ms) 1000 2000 f T– I E Characteristics (Typical) (VCE=–12V) 30 Typ 20 Cut-off Frequency fT(MHZ) 10 0 0.02 0.05 0.1 0.5 1 Emitter Current IE(A) 36 58 Collector Current IC(A) Safe Operating Area (Single Pulse) –20 –10 –5 DC 1 10m 00ms s –1 –0.5 Without Heatsink Natural Cooling –0.1 –5 –10 –50 –100 –150 Collector-Emitter Voltage VCE(V) Maximum Power Dissipation PC(W) Pc–Ta Derating 80 60 Infinite heatsink ith W 40 20 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) .


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