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2SA1905

Toshiba Semiconductor

Silicon PNP Epitaxial Type Transistor


Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1905 High-Current Switching Applications. 2SA1905 Unit: mm Low collector saturation voltage: VCE (sat) = −0.4 V (max) High speed switching time: tstg = 1.0 μs (typ.) Complementary to 2SC5076 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base volta...



Toshiba Semiconductor

2SA1905

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