DMP2123L
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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DMP2123L
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Please click here to visit our online spice models database.
Features
Low RDS(ON): 72 mΩ @VGS = -4.5V 108 mΩ @VGS = -2.7V 123 mΩ @VGS = -2.5V Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 3) Qualified to AEC-Q101 Standards for High Reliability "Green" Device (Note 4)
Mechanical Data
SOT-23
Drain
NEW PRODUCT
Case: SOT-23 Case Material - Molded Plastic, “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminals: Finish - Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Below Marking Information: See Page 4 Ordering Information: See page 4 Weight: 0.008 grams (approximate)
D
Gate
G
S
TOP VIEW
Source
TOP VIEW
Internal Schematic
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage
@TA = 25°C unless otherwise specified Symbol VDSS VGSS TA = 25°C TA = 70°C ID IDM IS Value -20 ±12 -3.0 -2.4 -15 2.0 Unit V V A A A
Characteristic
Drain Current (Note 1) Continuous Pulsed Drain Current (Note 2) Body-Diode Continuous Current (Note 1)
Thermal Characteristics
Characteristic Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1); Steady-State Operating and Storage Temperature Range
Notes:
Symbol PD RθJA TJ, TSTG
Value 1.4 90 -55 to +150
Unit W °C/W °C
1. Device mounted on 1"x1", FR-4 PC board with 2 oz. Copper and ...
