DMN32D2LFB4

DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Lead Free By Design/RoHS Compliant (Note 2) "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: DFN1006H4-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Diagram Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.001 grams (approximate) Drain DFN1006H4-3 Body Diode Gate S D G TOP VIEW Gate Protection Diode Source ESD PROTECTED BOTTOM VIEW Equivalent Circuit Maximum Ratings Drain Source Voltage Gate-Source Voltage Drain Current (Note 1) @TA = 25°C unless otherwise specified Symbol VDSS VGSS ID Value 30 ±10 300 Unit V V mA Characteristic Thermal Characteristics @TA = 25°C unless otherwise specified PD RθJA TJ, TSTG 350 357 -55 to +150 mW °C/W °C Total Power Dissipation (Note 1) @TA = 25°C Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Electrical Characteristics Characteristic O...