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2SA1891

Part Number	2SA1891
Manufacturer	Toshiba Semiconductor
Description	Silicon PNP Epitaxial Type Transistor
Published	Mar 22, 2005
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1891 Power Amplifier Applications Power Switching Applica...
Datasheet	2SA1891 PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1891 Power Amplifier Applications Power Switching Applications 2SA1891 Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −1 A) • High collector power dissipation: PC = 1.
3 W (Ta = 25 °C) • High-speed switching time: tstg = 300 ns (typ.
) • Complementary to 2SC5028 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg −60 −50 −6 −2 −4 −0.
2 1.
3 15...

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