DB2X41400L

DReovcisNioon. . T3 T4-EA-12043 DB2X41400L Silicon epitaxial planar type For high frequency rectification  Features  Low forward voltage VF  Forward current (Average) IF(AV) = 2 A rectification is possible  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 2.6 3.5 Product Standards Schottky Barrier Diode DB2X41400L 1.6 2 Unit: mm 0.13  Marking Symbol: 4P  Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)  Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Reverse voltage VR 40 Repetitive peak reverse voltage Forward current (Average) *1 Non-repetitive peak forward surge current *2 Junction temperature VRRM IF(AV) IFSM Tj 40 2 15 125 Operating ambient temperature Topr -40 to +85 Storage temperature Tstg -55 to +125 Note: *1 For embedded alumina substrate *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) Unit V V A A °C °C °C 1 0.55 0.8 1. Cathode 2. Anode Panasonic JEITA Code Mini2-F4-B SC-109D SOD-123 Internal Connection 2 1 Established : 2009-12-21 Revised : 2013-04-26 Page 1 of 4 DReovcisNioon. . T3 T4-EA-12043 Product Standards Schottky Barrier Diode DB2X41400L  Electrical Characteristics Ta = 25 C  3 C Parameter Symbol Conditions Min Typ Max Unit Forward voltage VF IF = 2A 0.42 0.49 V Reverse current IR VR = 40 V 200 μA Terminal capacitance Ct VR = 10 V, f = 1 MHz 70 pF Reverse recovery time *1 trr IF = IR = 100 mA, Irr = 10 mA RL = 100...