CHA6252-QFG

CHA6252-QFG 13-15.5GHz Power Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA6252-QFG is a four stages monolithic GaAs high power circuit that produces more than 2 Watt output power. It is designed for commercial communication systems. The circuit is manufactured with a pHEMT process, 0.5µm gate length. Main Features 36 Output power at 1dB comp. 35 OP1dB (dB) @3 Temperatures ■ Broadband performances: 13-15.5GHz ■ 22dB Linear Gain ■ 32.5dBm output power @1dB comp. ■ 41dBm output TOI ■ 22% PAE@1dB compression ■ DC bias: Vd=7Volt @ Id=1.1A ■ 32L-QFN5x5 34 33 32 31 30 29 28 27 26 Temp=25°C Temp=-40°C Temp=+85°C 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Freq Frequency range Gain Linear Gain OTOI Output TOI Pout Output Power @1dB comp. Min 13 Typ 22 41.0 32.5 Max 15.5 Unit GHz dB dBm dBm Ref. : DSCHA6252-QFG2355 - 20 Dec 12 1/12 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bat. Charmille - Parc SILIC - 10, Avenue du Québec - 91140 VILLEBON-SUR-YVETTE - France Tel.: +33 (0) 1 69 86 32 00 - Fax: +33 (0) 1 69 86 34 34 Free Datasheet http://www.datasheet4u.com/ CHA6252-QFG Electrical Characteristics 13-15.5GHz Power Amplifier Tamb.= +25°C, Vd = +7.0V Symbol Parameter Min Typ Max Unit Freq Frequency range 13 15.5 GHz Gain Linear Gain 22 dB G_T Linear gain variation versus Temp -0.05 dB/°C RL_in Input Return Loss -18 d...