CHA5012

CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride layer protects the transistors and the passive components. Special heat removal techniques are implemented to guarantee high reliability. To simplify the assembly process: the backside of the chip is both RF and DC grounded bond pads and back side are gold plated for compatibility with eutectic die attach method and thermosonic or thermocompression bonding process. Main Features ■ Frequency band : 9.2-10.8 GHz ■ Pout @3dB Gain compression : 29.5 dBm ■ P.A.E @3dB Gain Compression : 40 % ■ Two biasing modes: Digital control thanks to TTL interface Analog control thanks to biasing circuit ■ Chip size: 2.87 x 1.47 x 0.1 mm3 Pout & PAE @ 3dB gain compression and Linear Gain (Temperature 25° C) Main Characteristics Tamb = +25° C, Vc = +7.5V (Pulse 100µs 20%) Symbol Fop G P3dB Icq Parameter Operating frequency range Small signal gain Output power at 3dB compression Power supply quiescent current Min 9.2 21 23 29.5 Typ Max 10.8 Unit GHz dB dBm mA 200 ESD Protections : Electrostatic discharge sensitive device observe handling precautions Ref. : DSCHA50120179 - 28 Jun 10 1/10 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Départemen...