BZX84C18V

DATA SHEET SEMICONDUCTOR BZX84C2V4~BZX84C75 Zener Voltage Regulator Diodes MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 seconds H SOT–23 (TO–236AB) 3 1 3 Cathode 2 1 Anode THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,** T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temeprature **FR-5 = 1.0 x 0.75 x 0.62 in. **Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. R QJA T J , T stg Symbol PD Max 225 1.8 556 300 2.4 417 150 Unit mW mW/°C °C/W mW mW/°C °C/W °C R QJA PD http://www.yeashin.com 1 REV.02 20120403 Free Datasheet http://www.datasheet4u.com/ BZX84C2V4~BZX84C75 ELECTRICAL CHARACTERISTICS (Pinout: 1-Anode, 2-NC, 3-Cathode) (V Zener Voltage Vz1(Volts) @IZT1=5mA (Note 1) F =0.9V Max @ I Max Zener Impedance F =10 mA for all types) Max Zener Zener Voltage Zener Voltage V Z2 ( V o l t s ) Impedance Vz1(Volts) @ I ZT2= 1 m A Z ZT2 @IZT1=5mA (Note1) ( Oh m s) (Note 1) @I ZT2 =5mA Min Max Min Max Max Zener Impedance Z ZT3 ( Oh m s) @IZT3=20mA Max Reverse Leakage Current Type Number Marking Nom Min Max Z ZT1 ( Ohms) @I ZT1 =5mA CpF Max @VR=0 @iZT1=5mA f=1MHz d VZ /dt (mv/k) VR IR @ µA Volts Min Max BZX84C2V4 BZX84C2V7 BZX84C3V0 BZX84C3V3 BZX84C3V6 BZX84C3V9 BZX84C4V3 BZX84C4V7 BZX84C5V1 BZX84C5V6 BZX84C6V2 BZX84C6V8 BZX84C7V5 BZX84C8V2 BZX84C9V1 BZX84C10V BZX84C1...