BSS308PE

BSS308PE OptiMOS™ P3 Small-Signal-Transistor Features P-channel Enhancement mode Logic level (4.5V rated) ESD protected Qualified according to AEC Q101 100% lead-free; RoHS compliant Product Summary V DS R DS(on),max V GS=-10 V V GS=-4.5 V ID 30 80 130 -2.0 PG-SOT-23 3 V mΩ A 1 2 Type BSS308PE Package PG-SOT-23 Tape and Reel Information L6327: 3000 pcs/ reel Marking YFs Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse I D,pulse E AS T A=25 °C I D=-2 A, R GS=25 Ω I D=-2 A, V DS=-16V, di /dt =-200A/µs, T j,max=150 °C Value -2.0 -1.6 -8.0 -10.7 mJ Unit A Reverse diode d v /dt dv /dt 6 kV/µs Gate source voltage Power dissipation1) Operating and storage temperature ESD Class Soldering Temperature IEC climatic category; DIN IEC 68-1 V GS P tot T j, T stg JESD22-A114 -HBM T A=25 °C ±20 0.5 -55 ... 150 2 (2kV to 4kV) 260 °C 55/150/56 V W °C °C °C Rev 2.02 page 1 2010-03-29 Free Datasheet http://www.datasheet4u.com/ BSS308PE Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint1) Values typ. max. Unit - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics V (BR)DSS V GS= 0V, I D=-250µA V GS(th) I DSS V DS=VGS, I D=-11µA V DS=-30V, V GS=0 V, T j=25 °C V DS=-30V, V GS...