Document
LAPT 2SA1860
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886)
Application : Audio and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
Ratings
Unit
VCBO VCEO VEBO IC IB PC Tj Tstg
–150
V
–150
V
–5
V
–14
A
–3
A
80(Tc=25°C)
W
150
°C
–55 to +150
°C
sElectrical Characteristics
(Ta=25°C)
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB
Conditions VCB=–150V
VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–500mA VCE=–12V, IE=2A VCB=–10V, f=1MHz
Ratings –100max –100max –150min
50min∗ –2.0max
50typ 400typ
Unit µA µA V
V MHz pF
∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V)
(Ω)
(A)
(V)
(V)
(mA)
–60
12
–5
–10
5
–500
IB2 (mA)
500
ton (µs)
0.25typ
tstg (µs)
0.85typ
tf (µs)
0.2typ
External Dimensions FM100(TO3PF)
15.6±0.2
5.5±0.2 3.45 ±0.2
0.8±0.2 5.5
23.0±0.3 9.5±0.2
16.2
ø3.3±0.2 a b
3.0
1.6 3.3
5.45±0.1
1.75
2.15
1.05
+0.2 -0.1
5.45±0.1
0.65
+0.2 -0.1
0.8 3.35
1.5 4.4 1.5
Weight : Approx 6.5g a. Part No. B C E b. Lot No.
DC Current Gain hFE
Collector Current IC(A) –700mA
I C– V CE Characteristics (Typical)
–14
–
6 0 0–m5A0
0
mA –40
0
mA –3
0
0
m
A
–200mA
–150mA –10
–100mA
–5
–50mA
IB=–20mA
0
0
–1
–2
–3
–4
Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(VCE=–4V) –14
–10 –2
Collector Current IC(A) –3201˚52˚C5C˚((CC(CaasCsaeesTeTeeTmemp)pm)p)
–1 IC=–10A
–5A
0
0
–0.2
–0.4
–0.6
–0.8
–1.0
Base Current IB(A)
–5
0
0
–1
–2
Base-Emittor Voltage VBE(V)
Transient Thermal Resistance θ j-a( ˚ C / W )
DC Current Gain hFE
h FE– I C Characteristics (Typical)
(VCE=–4V) 200
100
Typ
50
h FE– I C Temperature Characteristics (Typical)
(VCE=–4V) 200
125˚C
100
25˚C
–30˚C
50
θ j-a– t Characteristics
3
1 0.5
20 –0.02
–0.1
–0.5 –1
Collector Current IC(A)
–5 –10–14
30 –0.02
–0.1
–0.5 –1
Collector Current IC(A)
0.1
–5 –10 –14
1
10
100
Time t(ms)
1000 2000
f T– I E Characteristics (Typical)
(VCE=–12V) 80
Cut-off Frequency fT(MHZ)
60 Typ
40
20
0
0.02
0.1
1
10
Emitter Current IE(A)
34
Collector Current IC(A)
Safe Operating Area (Single Pulse)
–40
–10
DC
10
1 0 m1sm s 0ms
–5
–1 –0.5
–0.1 –0.05
–2
Without Heatsink Natural Cooling
–5 –10
–50 –100 –200
Collector-Emitter Voltage VCE(V)
Maximum Power Dissipation PC(W)
Pc–Ta Derating
80
Infinite heatsink With
60 40
20
Without Heatsink
3.5
0
0
25
50
75
100 125 150
Ambient Temperature Ta(˚C)
.