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2SA1860 Dataheets PDF



Part Number 2SA1860
Manufacturers Sanken electric
Logo Sanken electric
Description Silicon PNP Transistor
Datasheet 2SA1860 Datasheet2SA1860 Datasheet (PDF)

LAPT 2SA1860 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO VCEO VEBO IC IB PC Tj Tstg –150 V –150 V –5 V –14 A –3 A 80(Tc=25°C) W 150 °C –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–500mA VCE=–12V, IE=2A VCB=–10V, f=1MHz Ratings.

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LAPT 2SA1860 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4886) Application : Audio and General Purpose sAbsolute maximum ratings (Ta=25°C) Symbol Ratings Unit VCBO VCEO VEBO IC IB PC Tj Tstg –150 V –150 V –5 V –14 A –3 A 80(Tc=25°C) W 150 °C –55 to +150 °C sElectrical Characteristics (Ta=25°C) Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=–150V VEB=–5V IC=–25mA VCE=–4V, IC=–5A IC=–5A, IB=–500mA VCE=–12V, IE=2A VCB=–10V, f=1MHz Ratings –100max –100max –150min 50min∗ –2.0max 50typ 400typ Unit µA µA V V MHz pF ∗hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180) sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (mA) –60 12 –5 –10 5 –500 IB2 (mA) 500 ton (µs) 0.25typ tstg (µs) 0.85typ tf (µs) 0.2typ External Dimensions FM100(TO3PF) 15.6±0.2 5.5±0.2 3.45 ±0.2 0.8±0.2 5.5 23.0±0.3 9.5±0.2 16.2 ø3.3±0.2 a b 3.0 1.6 3.3 5.45±0.1 1.75 2.15 1.05 +0.2 -0.1 5.45±0.1 0.65 +0.2 -0.1 0.8 3.35 1.5 4.4 1.5 Weight : Approx 6.5g a. Part No. B C E b. Lot No. DC Current Gain hFE Collector Current IC(A) –700mA I C– V CE Characteristics (Typical) –14 – 6 0 0–m5A0 0 mA –40 0 mA –3 0 0 m A –200mA –150mA –10 –100mA –5 –50mA IB=–20mA 0 0 –1 –2 –3 –4 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) V CE( s a t ) – I B Characteristics (Typical) –3 I C– V BE Temperature Characteristics (Typical) (VCE=–4V) –14 –10 –2 Collector Current IC(A) –3201˚52˚C5C˚((CC(CaasCsaeesTeTeeTmemp)pm)p) –1 IC=–10A –5A 0 0 –0.2 –0.4 –0.6 –0.8 –1.0 Base Current IB(A) –5 0 0 –1 –2 Base-Emittor Voltage VBE(V) Transient Thermal Resistance θ j-a( ˚ C / W ) DC Current Gain hFE h FE– I C Characteristics (Typical) (VCE=–4V) 200 100 Typ 50 h FE– I C Temperature Characteristics (Typical) (VCE=–4V) 200 125˚C 100 25˚C –30˚C 50 θ j-a– t Characteristics 3 1 0.5 20 –0.02 –0.1 –0.5 –1 Collector Current IC(A) –5 –10–14 30 –0.02 –0.1 –0.5 –1 Collector Current IC(A) 0.1 –5 –10 –14 1 10 100 Time t(ms) 1000 2000 f T– I E Characteristics (Typical) (VCE=–12V) 80 Cut-off Frequency fT(MHZ) 60 Typ 40 20 0 0.02 0.1 1 10 Emitter Current IE(A) 34 Collector Current IC(A) Safe Operating Area (Single Pulse) –40 –10 DC 10 1 0 m1sm s 0ms –5 –1 –0.5 –0.1 –0.05 –2 Without Heatsink Natural Cooling –5 –10 –50 –100 –200 Collector-Emitter Voltage VCE(V) Maximum Power Dissipation PC(W) Pc–Ta Derating 80 Infinite heatsink With 60 40 20 Without Heatsink 3.5 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) .


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