Ordering number:EN4132
PNP/NPN Epitaxial Planar Silicon Transistor
2SA1850/2SC4824
High Definition CRT Display Video Ou...
Ordering number:EN4132
PNP/
NPN Epitaxial Planar Silicon
Transistor
2SA1850/2SC4824
High Definition CRT Display Video Output Applications
Applications
· High Definition CRT Display Video Output Applications, Wide-Band Amplifier.
Features
· Adoption of FBET process. · High Gain Bandwidth product (fT=400MHz). · High breakdown voltage (VCEO=120V). · Small reverse transfer capacitance and excellent
high-frequency characteristic : Cre=1.7pF/
NPN, 2.2pF/
PNP. · Usage of radial taping to meet automatic mounting.
Package Dimensions
unit:mm 2084
[2SA1850/2SC4824]
( ) : 2SA1850
E : Emitter C : Collector B : Base
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Electrical Characteristics at Ta = 25˚C
Conditions
Parameter
Collector Cutoff Current Emitter Cutoff Current DC Current Gain
Gain Bandwidth Product Output Capacitance
Symbol
Conditions
ICBO IEBO hFE1 hFE2
fT Cob
VCB=(–)80V, IE=0 VEB=(–)2V, IC=0 VCE=(–)10V, IC=(–)10mA VCE=(–)10V, IC=(–)100mA VCE=(–)10V, IC=(–)50mA VCB=(–)30V, f=1MHz
Reverse Transfer Capacitance
Cre VCB=(–)30V, f=1MHz
SANYO : FLP
Ratings (–)120 (–)120 (–)3 (–)200 (–)400 1.3 150
–55 to +150
Unit V V V mA mA W ˚C ˚C
Ratings min typ
60* 20
400 (2.8)
2.1 (2.2)
1.7
max (–)0.1 (–)1.0 320*
Unit µA µA
MHz pF pF pF pF
...