NAND512W4A2C

NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 byte/264 word page, 1.8 V/3 V, NAND Flash memories Features ● High density NAND Flash memories – – 512 Mbit memory array Cost effective solutions for mass storage applications x 8 or x 16 bus width Multiplexed Address/ Data FBGA ● NAND interface – – TSOP48 12 x 20 mm ● ● Supply voltage: 1.8 V, 3.0 V Page size – – x 8 device: (512 + 16 spare) bytes x 16 device: (256 + 8 spare) words x 8 device: (16 K + 512 spare) bytes x 16 device: (8 K + 256 spare) words Random access: 12 µs (3 V)/15 µs (1.8 V) (max) Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min) Page Program time: 200 µs (typ) ● ● ● ● Block size – – VFBGA55 8 x 10 x 1 mm VFBGA63 9 x 11 x 1 mm Hardware Data Protection – Program/Erase locked during Power transitions 100,000 Program/Erase cycles (with ECC) 10 years Data Retention ● Page Read/Program – – – ● Data integrity – – ● ● ● ● ● ● Copy Back Program mode Fast Block Erase: 2 ms (typ) Status Register Electronic signature Chip Enable ‘don’t care’ Serial Number option Device summary Reference ECOPACK® packages Development tools – – – Error Correction Code models Bad Blocks Management and Wear Leveling algorithms Hardware simulation models Table 1. Part number NAND512R3A2C NAND512R4A2C(1) NAND512-A2C NAND512W3A2C NAND512W4A2C(1) 1. x16 organization only available for MCP. January 2008 Rev 2 1/51 www.numonyx.com 1 Free Datasheet http://www.datasheet4u.com/ Contents NAND512-A2C Content...