Document
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SA1822
High-Voltage Switching Applications High-Speed DC-DC Converter Application
2SA1822
Unit: mm
• Excellent switching times : ton = 1.0 µs (max), tf = 1.0 µs (max) at IC = −0.3 A
• High collector breakdown voltage: VCEO = −400 V
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−400
V
Collector-emitter voltage
VCEO
−400
V
Emitter-base voltage
VEBO −7 V
Collector current
IC −1 A
Base current
IB −0.5 A
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
2.0 W
25
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA TOSHIBA
― ― 2-10R1A
Note: Using continuously under heavy loads (e.g. the application of high
Weight: 1.7 g (typ.)
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
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2SA1822
Electrical Characteristics (Tc = 25°C)
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage
Symbol
Test Condition
ICBO IEBO V (BR) CEO
hFE
VCE (sat) VBE (sat)
VCB = −400 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −0.3 A VCE = −5 V, IC = −0.5 A IC = −0.3 A, IB = −30 mA IC = −0.3 A, IB = −30 mA
Min Typ. Max
― ― −400 30 20 ― ―
― ― ― ― ― −0.25 −0.75
−1 −1 ― 100 ― −1.0 −1.2
Unit µA µA V
V V
Rise time Switching time Storage time
Fall time
ton
20 µs Input IB1
Output
―
― 1.0
IB1 IB2 667 Ω
tstg IB2 ― ― 5.0 µs
VCC ≈ −200 V tf ― ― 1.0
−IB1 = IB2 = 30 mA, duty cycle ≤ 1%
Marking
A1822
Part No. (or abbreviation code) Lot No.
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SA1822
Collector current IC (A)
Collector-emitter saturation voltage VCE (sat) (V)
)
IC – VCE
−1.4 Common emitter
−1.2 Tc = 25°C
−1.0 −100 −50 −30 −0.8
−20 −16 −12
−0.6 −8
−0.4 IB = −4 mA −0.2
0 0 −2 −4 −6 −8 −10 −12 −14
Collector-emitter voltage VCE (V)
VCE (sat) – IC
−3 Common emitter IC/IB = 10
−1
Collector current IC (A)
IC – VBE
−1.2
Common emitter −1.0 VCE = −5 V
−0.8
−0.6
Tc = 125°C
25 −55
−0.4
−0.2
0
0
−0.2
−0.4
−0.6
−0.8
Base-emitter voltage VBE (V)
−1.0
VBE (sat) – IC
−10 Common emitter IC/IB = 10
−3
Base-emitter saturation voltage VBE (sat) (V)
)
−0.3
−0.1 −0.07
−30
Tc = 125°C
25
−55
−100
−300
Collector current IC (mA)
−1000
hFE – IC
300 Common emitter VCE = −5 V
Tc = 125°C
100 25
−55 30
10 −30
−100
−300
Collector current IC (mA)
−1000
Switching time (µs)
−1 −0.3
−30
Tc = −55°C
25 125
−100
−300
Collector current IC (mA)
−1000
Switching Characteristics
10 IC/IB = 10 −IB1 = IB2
tstg Pulse width = 20 µs 3 Duty cycle ≤ 1%
Tc = 25°C
1 ton
tf 0.3 0.2
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Collector current IC (A)
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DC current gain hFE
2SA1822
Collector current IC (A)
Collector-emitter saturation voltage VCE (sat) (V)
)
−1.4 −1.2 −1.0 −0.8 −0.6 −0.4 −0.2
IC – VCE
−100 −50 −30
Common emitter Tc = 25°C
−20 −16 −12
−8
IB = −4 mA
0 0 −2 −4 −6 −8 −10 −12 −14
Collector-emitter voltage VCE (V)
VCE (sat) – IC
−3 Common emitter IC/IB = 10
−1
Collector current IC (A)
−1.2 −1.0
Common emitter VCE = −5 V
IC – VBE
−0.8
−0.6 −0.4
Tc = 125°C
25 −55
−0.2
0 0 −0.2 −0.4 −0.6 −0.8
Base-emitter voltage VBE (V)
−1.0
VBE (sat) – IC
−10 Common emitter IC/IB = 10
−3
Base-emitter saturation voltage VBE (sat) (V)
)
−0.3
−0.1 −0.07
−30
Tc = 125°C
25
−55
−100
−300
Collector current IC (mA)
−1000
hFE – IC
300 Common emitter VCE = −5 V
Tc = 125°C
100 25
−55 30
10 −30
−100
−300
Collector current IC (mA)
−1000
Switching time (µs)
−1 −0.3
−30
Tc = −55°C
25 125
−100
−300
Collector current IC (mA)
−1000
Switching Characteristics
10 IC/IB = 10 −IB1 = IB2
tstg Pulse width = 20 µs 3 Duty cycle ≤ 1%
Tc = 25°C
1 ton
tf 0.3 0.2
0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Collector current IC (A)
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DC current gain hFE
2SA1822
RESTRICTIONS ON PRODUCT USE
• The information contained herein is subject to change without notice.
030619EAA
• The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and re.