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2SA1822 Dataheets PDF



Part Number 2SA1822
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon NPN Transistor
Datasheet 2SA1822 Datasheet2SA1822 Datasheet (PDF)

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SA1822 High-Voltage Switching Applications High-Speed DC-DC Converter Application 2SA1822 Unit: mm • Excellent switching times : ton = 1.0 µs (max), tf = 1.0 µs (max) at IC = −0.3 A • High collector breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −400 V Collector-emitter voltage VCEO −400 V Emitter-base voltage VEBO −7 V Collector current IC.

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SA1822 High-Voltage Switching Applications High-Speed DC-DC Converter Application 2SA1822 Unit: mm • Excellent switching times : ton = 1.0 µs (max), tf = 1.0 µs (max) at IC = −0.3 A • High collector breakdown voltage: VCEO = −400 V Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −400 V Collector-emitter voltage VCEO −400 V Emitter-base voltage VEBO −7 V Collector current IC −1 A Base current IB −0.5 A Collector power dissipation Ta = 25°C Tc = 25°C PC 2.0 W 25 Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 1.7 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1822 Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol Test Condition ICBO IEBO V (BR) CEO hFE VCE (sat) VBE (sat) VCB = −400 V, IE = 0 VEB = −7 V, IC = 0 IC = −10 mA, IB = 0 VCE = −5 V, IC = −0.3 A VCE = −5 V, IC = −0.5 A IC = −0.3 A, IB = −30 mA IC = −0.3 A, IB = −30 mA Min Typ. Max ― ― −400 30 20 ― ― ― ― ― ― ― −0.25 −0.75 −1 −1 ― 100 ― −1.0 −1.2 Unit µA µA V V V Rise time Switching time Storage time Fall time ton 20 µs Input IB1 Output ― ― 1.0 IB1 IB2 667 Ω tstg IB2 ― ― 5.0 µs VCC ≈ −200 V tf ― ― 1.0 −IB1 = IB2 = 30 mA, duty cycle ≤ 1% Marking A1822 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1822 Collector current IC (A) Collector-emitter saturation voltage VCE (sat) (V) ) IC – VCE −1.4 Common emitter −1.2 Tc = 25°C −1.0 −100 −50 −30 −0.8 −20 −16 −12 −0.6 −8 −0.4 IB = −4 mA −0.2 0 0 −2 −4 −6 −8 −10 −12 −14 Collector-emitter voltage VCE (V) VCE (sat) – IC −3 Common emitter IC/IB = 10 −1 Collector current IC (A) IC – VBE −1.2 Common emitter −1.0 VCE = −5 V −0.8 −0.6 Tc = 125°C 25 −55 −0.4 −0.2 0 0 −0.2 −0.4 −0.6 −0.8 Base-emitter voltage VBE (V) −1.0 VBE (sat) – IC −10 Common emitter IC/IB = 10 −3 Base-emitter saturation voltage VBE (sat) (V) ) −0.3 −0.1 −0.07 −30 Tc = 125°C 25 −55 −100 −300 Collector current IC (mA) −1000 hFE – IC 300 Common emitter VCE = −5 V Tc = 125°C 100 25 −55 30 10 −30 −100 −300 Collector current IC (mA) −1000 Switching time (µs) −1 −0.3 −30 Tc = −55°C 25 125 −100 −300 Collector current IC (mA) −1000 Switching Characteristics 10 IC/IB = 10 −IB1 = IB2 tstg Pulse width = 20 µs 3 Duty cycle ≤ 1% Tc = 25°C 1 ton tf 0.3 0.2 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Collector current IC (A) 3 2006-11-09 DC current gain hFE 2SA1822 Collector current IC (A) Collector-emitter saturation voltage VCE (sat) (V) ) −1.4 −1.2 −1.0 −0.8 −0.6 −0.4 −0.2 IC – VCE −100 −50 −30 Common emitter Tc = 25°C −20 −16 −12 −8 IB = −4 mA 0 0 −2 −4 −6 −8 −10 −12 −14 Collector-emitter voltage VCE (V) VCE (sat) – IC −3 Common emitter IC/IB = 10 −1 Collector current IC (A) −1.2 −1.0 Common emitter VCE = −5 V IC – VBE −0.8 −0.6 −0.4 Tc = 125°C 25 −55 −0.2 0 0 −0.2 −0.4 −0.6 −0.8 Base-emitter voltage VBE (V) −1.0 VBE (sat) – IC −10 Common emitter IC/IB = 10 −3 Base-emitter saturation voltage VBE (sat) (V) ) −0.3 −0.1 −0.07 −30 Tc = 125°C 25 −55 −100 −300 Collector current IC (mA) −1000 hFE – IC 300 Common emitter VCE = −5 V Tc = 125°C 100 25 −55 30 10 −30 −100 −300 Collector current IC (mA) −1000 Switching time (µs) −1 −0.3 −30 Tc = −55°C 25 125 −100 −300 Collector current IC (mA) −1000 Switching Characteristics 10 IC/IB = 10 −IB1 = IB2 tstg Pulse width = 20 µs 3 Duty cycle ≤ 1% Tc = 25°C 1 ton tf 0.3 0.2 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 Collector current IC (A) 4 2006-11-09 DC current gain hFE 2SA1822 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 030619EAA • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and re.


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