Document
STGB30NC60K STGP30NC60K
30 A - 600 V - short circuit rugged IGBT
Features
■ ■ ■
Low on-voltage drop (VCE(sat)) Low Cres / Cies ratio (no cross conduction susceptibility) Short circuit withstand time 10 µs
3 1
1 3 2
Applications
■ ■
High frequency inverters Motor drivers
D²PAK
TO-220
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Figure 1. Internal schematic diagram
Table 1.
Device summary
Marking GB30NC60K GP30NC60K Package D²PAK TO-220 Packaging Tape and reel Tube
Order codes STGB30NC60KT4 STGP30NC60K
March 2008
Rev 2
1/15
www.st.com 15
Free Datasheet http://www.datasheet4u.com/
Contents
STGB30NC60K - STGP30NC60K
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
2/15
Free Datasheet http://www.datasheet4u.com/
STGB30NC60K - STGP30NC60K
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VCES IC IC
(1) (1)
Absolute maximum ratings
Parameter Collector-emitter voltage (VGE = 0) Collector current (continuous) at TC = 25°C Collector current (continuous) at TC = 100°C Turn-off latching current Pulsed collector current Gate-emitter voltage Total dissipation at TC = 25°C Short circuit withstand time, VCE = 0.5V(BR)CES Tj = 125°C, RG = 10 Ω, VGE = 12 V Operating junction temperature Value 600 60 26 125 125 ±20 185 10 – 55 to 150 Unit V A A A A V W µs °C
ICL (2) ICP
(3)
VGE PTOT tscw Tj
1.
Calculated according to the iterative formula:
T J ( MAX ) – T c I c ( T c ) = ------------------------------------------------------------------------------------R thj – c × V CE ( sat ) ( MAX ) ⋅ ( T c ,I c )
2. Vclamp = 80%,(VCES), Tj =150°C, RG = 10 Ω, VGE = 15 V 3. Pulse width limited by max. junction temperature allowed
Table 3.
Symbol
Thermal resistance
Parameter Value 0.675 62.5 Unit °C/W °C/W
Rthj-case Thermal resistance junction-case max. Rthj-amb Thermal resistance junction-ambient max.
3/15
Free Datasheet http://www.datasheet4u.com/
Electrical characteristics
STGB30NC60K - STGP30NC60K
2
Electrical characteristics
(TCASE=25°C unless otherwise specified) Table 4.
Symbol V(BR)CES
Static
Parameter Test conditions Min. 600 2.1 1.9 150 1 4.5 6.5 ±100 15 2.7 Typ. Max. Unit V V V µA mA V nA S
Collector-emitter breakdown IC= 1 mA voltage (VGE= 0) Collector-emitter saturation voltage Collector cut-off curren.