Power MOSFET
AUTOMOTIVE GRADE
PD - 96399A
AUIRLS4030-7P
D
Features
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HEXFET® Power MOSFET
Optimized for Logic Leve...
Description
AUTOMOTIVE GRADE
PD - 96399A
AUIRLS4030-7P
D
Features
l l l l l l l l
HEXFET® Power MOSFET
Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
G S
VDSS RDS(on) typ. max. ID
D
100V 3.2mΩ 3.9mΩ 190A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
S G S S
S
S
D2Pak 7 Pin AUIRLS4030-7P
G
D
S
Absolute Maximum Ratings
Gate
Drain
Source
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified...
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