Document
AUTOMOTIVE GRADE
Features
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AUIRFS8405 AUIRFSL8405
HEXFET® Power MOSFET
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Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
40V 1.9mΩ 2.3mΩ 193A 120A
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Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications.
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Applications
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S D G D2Pak AUIRFS8405
S D G TO-262 AUIRFSL8405
Electric Power Steering (EPS) Battery Switch Start/Stop Micro Hybrid Heavy Loads DC-DC Applications
G Gate
D Drain
S Source
Base part number AUIRFSL8405 AUIRFS8405
Package Type TO-262 D2Pak
Standard Pack Form Tube Tube Tape and Reel Left Tape and Reel Right
Complete Part Number Quantity 50 50 800 800 AUIRFSL8405 AUIRFS8405 AUIRFS8405TRL AUIRFS8405TRR
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor
Max.
193 137 120 904 163 1.1
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Units
A
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W W/°C V °C
Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
± 20 -55 to + 175 300 10lbf in (1.1N m)
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HEXFET® is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/
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www.irf.com © 2013 International Rectifier
April 30, 2013
Free Datasheet http://www.datasheet4u.com/
AUIRFS/SL8405
Avalanche Characteristics
EAS (Thermally limited) EAS (tested) IAR EAR Single Pulse Avalanche Energy
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Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy
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Thermal Resistance
Symbol
R θJC R θJA
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181 247 See Fig. 14, 15, 24a, 24b
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