AUIRF7316Q

PD - 96365B AUIRF7316Q Features l l l l l l l l HEXFET® Power MOSFET D1 D1 D2 D2 Advanced Planar Technology Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free, RoHS Compliant S1 G1 S2 G2 1 2 3 4 8 7 V(BR)DSS RDS(on) typ. -30V 0.042Ω 6 5 max. 0.058Ω ID -4.9A Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is no...