RJK03C5DPA

Preliminary Datasheet RJK03C5DPA 30V, 50A, 2.9m max. Built in SBD N Channel Power MOS FET High Speed Power Switching Features        High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance Pb-free Halogen-free R07DS0940EJ0400 Rev.4.00 Mar 22, 2013 Outline RENESAS Package code: PWSN0008DE-A (Package name: WPAK(3F)) 5 6 7 8 D D D D 5 6 7 8 4 G 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Value at Tch = 25C, Rg  50  3. Tc = 25C Symbol VDSS VGSS ID Note1 ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 30 ±20 50 200 50 20 40 50 2.5 150 –55 to +150 Unit V V A A A A mJ W C/W C C R07DS0940EJ0400 Rev.4.00 Mar 22, 2013 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ RJK03C5DPA Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source ...