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2SA1777 Dataheets PDF



Part Number 2SA1777
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP/NPN Epitaxial Planar Silicon Transistors
Datasheet 2SA1777 Datasheet2SA1777 Datasheet (PDF)

Ordering number:EN3644 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1777/2SC4623 Very High-Definition CRT Display Video Output Applications Features · High fT : fT=400MHz (typ). · High breakdown voltage : VCEO≥250V(min). · High current. · Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=3.4pF (NPN), 4.2pF (PNP). · Complementary pair with the 2SA1777/2SC4623. · Adoption of FBET process. Package Dimensions unit:mm 2042B [2SA1777/2SC4623] ( ) : 2SA1777 Sp.

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Ordering number:EN3644 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1777/2SC4623 Very High-Definition CRT Display Video Output Applications Features · High fT : fT=400MHz (typ). · High breakdown voltage : VCEO≥250V(min). · High current. · Small reverse transfer capacitance and excellent high-frequnecy characteristic : Cre=3.4pF (NPN), 4.2pF (PNP). · Complementary pair with the 2SA1777/2SC4623. · Adoption of FBET process. Package Dimensions unit:mm 2042B [2SA1777/2SC4623] ( ) : 2SA1777 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Colletor Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)150V, IE=0 VEB=(–)2V, IC=0 VCE=(–)10V, IC=(–)50mA VCE=(–)10V, IC=(–)250mA VCE=(–)30V, IC=(–)100mA VCB=(–)30V, f=1MHz Reverse Transfer Capacitance Cre VCB=(–)30V, f=1MHz 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML Ratings (–)250 (–)250 (–)3 (–)300 (–)600 1.3 10 150 –55 to +150 Unit V V V mA mA W W ˚C ˚C Ratings min typ 40* 20 400 (5.0) 4.2 (4.2) 3.4 max (–)0.1 (–)1.0 200* Unit µA µA MHz pF pF pF pF Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 83198HA (KT)/41694TH (KOTO) 8-7036 No.3644–1/4 2SA1777/2SC4623 Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol Conditions VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO IC=(–)50mA, IB=(–)5mA IC=(–)50mA, IB=(–)5mA IC=(–)10µA, IE=0 IC=(–)1mA, RBE=∞ IE=(–)10µA, IC=0 * : The 2SA1777/2SC4623 are classified by 50mA hFE as follows : 40 C 80 60 D 120 100 E 200 Ratings min typ (–)250 (–)250 (–)3 max (–)1.0 (–)1.0 Unit V V V V V No.3644–2/4 2SA1777/2SC4623 No.3644–3/4 2SA1.


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