N0604N

Data Sheet N0604N N-channel MOSFET 60 V, 82 A, 6.5 mΩ Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 Features Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A) Low input capacitance Ciss = 4150 pF TYP. (VDS = 25 V, VGS = 0 V) High current ID(DC) = ±82 A RoHS Compliant Ordering Information Part No. N0604N-S19-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50 p/tube TO-220 1.9 g TYP. Package Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) Absolute Maximum Ratings (TA = 25°C, all terminals are connected) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) ∗1 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current ∗2 Single Avalanche Energy ∗2 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS Ratings 60 ±20 ±82 ±200 116 1.5 150 −55 to +150 35 125 Unit V V A A W W °C °C A mJ Thermal Resistance Channel to Case (Drain) Thermal Resistance 2 Channel to Ambient Thermal Resistance ∗ Rth(ch-C) Rth(ch-A) 1.08 83.3 °C/W °C/W Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1% ∗ 2. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V, L = 100 μH R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ N0604N Chapter Title Electrical Ch...