Part Number | N0600N |
Manufacturer | Renesas |
Description | MOS FIELD EFFECT TRANSISTOR |
Features | • Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A... |
Published | Sep 9, 2013 |
Datasheet | N0600N PDF File |