Preliminary Data Sheet
N0600N
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0220EJ0100 Rev.1.00 Jan 25, 2011
The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX. (VGS = 4.5 V, ID = 15 A) Low input cap...
