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N0600N

Renesas
Part Number N0600N
Manufacturer Renesas
Description MOS FIELD EFFECT TRANSISTOR
Published Sep 9, 2013
Detailed Description Preliminary Data Sheet N0600N MOS FIELD EFFECT TRANSISTOR Description R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 The N0600...
Datasheet PDF File N0600N PDF File

N0600N
N0600N

Overview
Preliminary Data Sheet N0600N MOS FIELD EFFECT TRANSISTOR Description R07DS0220EJ0100 Rev.
1.
00 Jan 25, 2011 The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features • Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX.
(VGS =10 V, ID = 15 A) ⎯ RDS(on)2 = 36 mΩ MAX.
(VGS = 4.
5 V, ID = 15 A) • Low input capacitance ⎯ Ciss = 1380 pF TYP.
(VDS = 10 V, VGS = 0 V) Ordering Information Part No.
N0600N-S17-AY ∗1 Lead Plating Pure Sn (Tin) Packing Tube 50p/tube Package Isolated TO-220 typ.
2.
2 g Note: ∗1.
Pb-free (This product does not contain Pb in the external electrode and other parts.
) Absolute Maximum Ratings (TA = 25°C) Item Drain to Sour...


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