2SA1774

2SA1774 PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SC−75/SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features http://onsemi.com COLLECTOR 3 Reduces Board Space High hFE, 210−460 (typical) Low VCE(sat), < 0.5 V Available in 8 mm, 7−inch/3000 Unit Tape and Reel Pb−Free Packages are Available* 1 BASE 2 EMITTER MAXIMUM RATINGS (TA = 25°C) Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Collector Current − Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value −60 −50 −6.0 −100 Unit Vdc Vdc Vdc mAdc SC−75 CASE 463−01 STYLE 1 1 2 3 www.DataSheet4U.com THERMAL CHARACTERISTICS Characteristic Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 −55 ~ + 150 Unit mW °C °C MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Device mounted on a FR−4 glass epoxy printed circuit board using the minimum recommended footprint. F9 M G G 1 F9 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary ...