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FGAF40N60SMD

Fairchild Semiconductor

Field Stop IGBT

FGAF40N60SMD 600 V 40 A Field Stop IGBT May 2013 FGAF40N60SMD 600 V, 40 A Field Stop IGBT Features • Maximum Junction ...


Fairchild Semiconductor

FGAF40N60SMD

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Description
FGAF40N60SMD 600 V 40 A Field Stop IGBT May 2013 FGAF40N60SMD 600 V, 40 A Field Stop IGBT Features Maximum Junction Temperature : TJ = High Current Capability Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A High Input Impedance Fast Swiching: EOFF = 6.5 uJ/A Tightened Parameter Distribution RoHS Compliant 175oC Positive Temperaure Co-efficient for easy Parallel Operating General Description Using novel field stop IGBT technology, Fairchild®’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential. Applications Sewing Machine, CNC Home Appliances, Motor-Control C G E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM (1) PD TJ Tstg TL Description Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Forward Current Diode Forward Current Pulsed Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC @ TC = 25oC @ TC = 100oC Ratings 600 ± 20 80* 40* 120* 40* 20* 120* 115 58 -55 to +175 -55 to +175 300 Unit V V A A A A A A W W o C oC o C Notes: *Drain current limited by maximum junction temperature 1: Repetitive rating: Pulse width l...




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