FDMS7570S N-Channel PowerTrench®SyncFET
FDMS7570S
N-Channel PowerTrench® SyncFETTM
25 V, 49 A, 1.95 mΩ
October 2014
F...
FDMS7570S N-Channel PowerTrench®SyncFET
FDMS7570S
N-Channel PowerTrench® SyncFETTM
25 V, 49 A, 1.95 mΩ
October 2014
Features
Max rDS(on) = 1.95 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2.85 mΩ at VGS = 4.5 V, ID = 22 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
SyncFET
Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
The FDMS7570S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic
Schottky body diode.
Applications
Synchronous Rectifier for Synchronous Buck Converters
Notebook
Server
Telecom High Efficiency DC-DC Switch Mode Power Supplies
Top Bottom Pin 1
S D5
S
S G
D6
D7
D
D
D
Power 56
D
D8
4G 3S 2S 1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed
TC = 25 °C TC = 25 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a) (Note 3)
(Note 1a)
Ratings 25 ±20 49 156 28 180 144 83 2.5
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