FDMC86520DC

FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET September 2012 FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET 60 V, 40 A, 6.3 mΩ Features „ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Top Side Cooling PQFN package „ Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 17 A „ Max rDS(on) = 8.7 mΩ at VGS = 8 V, ID = 14.5 A „ High performance technology for extremely low rDS(on) „ RoHS Compliant Applications „ Primary DC-DC Switch „ Motor Bridge Switch „ Synchronous Rectifier Pin 1 S S S G S S D S G D D D D D Top D D Power 33 Bottom MOSFET Maximum Ratings TA= 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25 °C TA = 25 °C (Note 1a) (Note 3) TC = 25 °C TA = 25 °C (Note 1a) Ratings 60 ±20 40 17 80 128 73 3.0 -55 to + 150 mJ W °C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RθJC RθJC RθJA RθJA RθJA RθJA RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Thermal Resistance...