FDMC8651 N-Channel Power Trench® MOSFET
July 2008
FDMC8651
N-Channel Power Trench® MOSFET
30 V, 20 A, 6.1 mΩ
Features
Max rDS(on) = 6.1 mΩ at VGS = 4.5 V, ID = 15 A Max rDS(on) = 9.3 mΩ at VGS = 2.5 V, ID = 12 A Low Profile - 1 mm max in Power 33 100% UIL Tested RoHS Compliant
General Description
This device has been designed specifically to imp...
