Document
Transistor
2SA1762
Silicon PNP epitaxial planer type
For low-frequency driver amplification Complementary to 2SC4606
6.9±0.1 1.5 2.5±0.1 1.0
1.0 2.4±0.2 2.0±0.2 3.5±0.1
Unit: mm
s Features
q q
1.5 R0.9 R0.9
High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier.
0.4
1.0±0.1
R
0.
0.85
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings –80 –80 –5 –1 – 0.5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
3
0.55±0.1
1.25±0.05
0.45±0.05
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
2
1
2.5
2.5
EIAJ:SC–71 M Type Mold Package
Printed circuit board: Copper foil area of thickness of 1.7mm for the collector portion
or more, and the board
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(Ta=25˚C)
Symbol ICBO VCBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = –20V, IE = 0 IC = –10µA, IE = 0 IC = –100µA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA VCE = –5V, IC = –500mA IC = –300mA, IB = –30mA IC = –300mA, IB = –30mA VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1 MHz –80 –80 –5 130 50 100 – 0.2 – 0.85 85 11 20 – 0.4 –1.2 V V MHz pF 330 min typ max – 0.1 Unit µA V V V
*h
FE1
Rank classification
R 130 ~ 220 S 185 ~ 330
Rank hFE1
4.1±0.2
4.5±0.1
7
1
Transistor
PC — Ta
1.2 –1.2 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the collector portion. Ta=25˚C –1.0 IB=–10mA –1.0
2SA1762
IC — VCE
–1.2 VCE=–10V Ta=25˚C
IC — IB
Collector power dissipation PC (W)
1.0
Collector current IC (A)
0.8
– 0.8
–8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA
0.6
– 0.6
0.4
– 0.4
0.2
– 0.2
0 0 20 40 60 80 100 120 140 160
0 0 –2 –4 –6 –8 –10
Collector current IC (A)
–9mA
– 0.8
– 0.6
– 0.4
– 0.2
0 0 –2 –4 –6 –8 –10
Ambient temperature Ta (˚C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) — IC
Collector to emitter saturation voltage VCE(sat) (V)
–10 –30 –10 –3 –1 25˚C –25˚C
VBE(sat) — IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 –100 –30 –10 –3 –1 Ta=–25˚C 75˚C IC/IB=10 300
hFE — IC
VCE=–10V
Forward current transfer ratio hFE
250
200
Ta=75˚C 25˚C
Ta=75˚C
25˚C
150 –25˚C 100
– 0.3 – 0.1 – 0.03 – 0.01 –1
– 0.3 – 0.1 – 0.03 – 0.01 –1
50
–3
–10
–30
–100 –300 –1000
–3
–10
–30
–100 –300 –1000
0 –1
–3
–10
–30
–100 –300 –1000
Collector current IC (mA)
Collector current IC (mA)
Collector current IC (mA)
fT — IE
120
Cob — VCB
Collector output capacitance Cob (pF)
VCB=–10V f=200MHz Ta.
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