KI5515DC

SMD Type Complementary 20-V (D-S) MOSFET KI5515DC IC IC Features TrenchFET Power MOSFETS Ultra Low rDS(on) and Excellent Power Handling In Compact Footprint Absolute Maximum Ratings TA = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 )* TA = 25 TA = 85 Pulsed Drain Current Continuous Source Current (Diode Conduction)* Maximum Power Dissipation* TA = 25 TA = 85 Operating Junction and Storage Temperature Range *Surface Mounted on 1" X 1" FR4 Board. TJ, Tstg IDM IS PD 1.8 2.1 1.1 Symbol VDS VGS ID 5.9 4.2 20 0.9 1.1 0.6 -1.8 2.1 1.1 -55 to 150 4.4 3.1 N-Channel 5 secs Steady State 20 8 -4.1 -2.9 -15 -0.9 1.1 0.6 -3 -2.2 P-Channel 5 secs Steady State -20 V V A A A A W W Unit Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Case (Drain) t 5 sec Symbol RthJA RthJF Typ 50 90 30 Max 60 110 40 /W Unit Steady State Steady State *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 Free Datasheet http://www.datasheet4u.com/ SMD Type KI5515DC Electrical Characteristics TJ = 25 Parameter Gate Threshold Voltage Gate Body Leakage Symbol VGS( th) IGSS Testconditons VDS = VGS, ID = 250 A VDS = VGS, ID = -250 VDS = 0 V VGS = 8 V VDS = 0 V VGS = 8V VDS = 20V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 VDS = -20V, VGS = 0 V, TJ = 85 On State Drain Currenta ID(on) VDS VDS 5 V, VGS = 4.5 V -5 V, VGS = -4.5 V A N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch ...