DatasheetsPDF.com

MJE200

Silicon NPN Power Transistor

Description

isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) ·DC Current Gain- : hFE = 70(Min) @ IC= 500mA ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)@ IC = 500mA ·High Current-Gain—Bandwidth Product fT= 65MHz(Min) @ IC= 100mA ·Minimum Lot-to-Lot variations for robust device performance and ...

Inchange Semiconductor

Download MJE200 Datasheet

Similar Datasheet

MJE200 5 AMPERE POWER TRANSISTORS - Motorola
MJE200 NPN Epitaxial Silicon Transistor - Fairchild
MJE200 Silicon NPN Power Transistor - Inchange Semiconductor
MJE200 COMPLEMENTARY SILICON POWER TRANSISTORS - Central Semiconductor
MJE200 Silicon NPN transistor - BLUE ROCKET ELECTRONICS
MJE200 Complementary Silicon Power Plastic Transistors - ON Semiconductor
MJE200G Complementary Silicon Power Plastic Transistors - ON Semiconductor
MJE205 5 Ampere Power Transistor - ETC
MJE205K 5 Ampere Power Transistor - ETC
MJE210 SILICON PNP TRANSISTOR - ST Microelectronics

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)