BYM300B170DN2

Technische Information / Technical Information IGBT-Module IGBT-Modules BYM 300 B 170 DN2 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Sperrspannung der Diode Diode rerverse voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage Tvj = 25°C VCES 1700 V TC = 80 °C IF 300 A tp = 1 ms IFRM 600 A VR = 0V, t p = 10ms, T Vj = 125°C 2 I t 23,5 k A2s RMS, f = 50 Hz, t = 1 min. VISOL 4,0 kV Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 300A, V GE = 0V, Tvj = 25°C IF = 300A, V GE = 0V, Tvj = 125°C IF = 300A, - diF/dt = 4500A/µs VR = 900V, V GE = -15V, Tvj = 25°C VR = 900V, V GE = -15V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 300A, - diF/dt = 4500A/µs VR = 900V, V GE = -15V, Tvj = 25°C VR = 900V, V GE = -15V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 300A, - diF/dt = 4500A/µs VR = 900V, V GE = -15V, Tvj = 25°C VR = 900V, V GE = -15V, Tvj = 125°C Erec 16 31 mWs mWs Qr 34 75 µAs µAs IRM 220 330 A A VF min. - typ. 2,2 2 max. 2,6 V V prepared by: Alfons Wiesenthal approved by: Christoph Lübke date of publication: 2002-11-25 revision: 2.2 1(4) DB_BYM300B170DN2_2.2.xls Free Datasheet http://www.datasheet4u...