2N6397

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2N6395 THRU 2N6398 TECHNICAL SPECIFICATIONS OF SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts CURRENT - 12 Amperes Description * Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 100 to 600 volts * Non-sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors TO-220AB .185(4.70) .173(4.40) .055(1.39) .045(1.15) .295(7.49) .220(5.58) Pinning 1 = Cathode, 2 = Anode, 3 = Gate .151 Typ (3.83) .405(10.28) .380(9.66) Absolute Maximum Ratings(TA=25oC) Characteristic Peak Repetitive Off-State Voltage and Reverse Voltage 2N6395 2N6396 2N6397 2N6398 Symbol VDRM, VRRM IT(RMS) ITSM IGM PGM PG(AV) TJ TSTG Rating 100 200 400 600 12 100 2.0 20 0.5 -40 to +110 -40 to +150 Unit V .625(15.87) .570(14.48) .350(8.90) .330(8.38) 1 2 3 .640 Typ (16.25) On-State RMS Current (TA=57oC, 180o Conduction Angles) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) Forward Peak Gate Current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature A A A W W o o .055(1.40) .045(1.14) .037(0.95) .030(0.75) .562(14.27) .500(12.70) .100 Typ (2.54) .024(0.60) .014(0.35) C C Dimensions in inches and (millimeters) Electrical Characteristics o Characteristic Pea...