(2N6395 - 2N6398) SILICON CONTROLLED RECTIFIERS
DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N6395 THRU 2N6398
TECHNICAL SPECIFICATIONS OF SILICON CONTROLLED R...
Description
DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
2N6395 THRU 2N6398
TECHNICAL SPECIFICATIONS OF SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 100 to 600 Volts CURRENT - 12 Amperes
Description
* Driven directly with IC and MOS device * Feature proprietary, void-free glass passivated chips * Available in voltage ratings from 100 to 600 volts * Non-sensitive gate trigger current * Designed for high volume, line-powered control application in relay lamp drivers, small motor controls, gate drivers for large thyristors
TO-220AB
.185(4.70) .173(4.40) .055(1.39) .045(1.15) .295(7.49) .220(5.58)
Pinning
1 = Cathode, 2 = Anode, 3 = Gate
.151 Typ (3.83)
.405(10.28) .380(9.66)
Absolute Maximum Ratings(TA=25oC)
Characteristic Peak Repetitive Off-State Voltage and Reverse Voltage 2N6395 2N6396 2N6397 2N6398 Symbol VDRM, VRRM IT(RMS) ITSM IGM PGM PG(AV) TJ TSTG Rating 100 200 400 600 12 100 2.0 20 0.5 -40 to +110 -40 to +150 Unit V
.625(15.87) .570(14.48)
.350(8.90) .330(8.38) 1 2 3
.640 Typ (16.25)
On-State RMS Current (TA=57oC, 180o Conduction Angles) Peak Non-repetitive Surge Current (1/2 Cycle, Sine Wave 60Hz) Forward Peak Gate Current Forward Peak Gate Power Dissipation Forward Average Gate Power Dissipation Operating Junction Temperature Storage Temperature
A A A W W
o o
.055(1.40) .045(1.14) .037(0.95) .030(0.75)
.562(14.27) .500(12.70)
.100 Typ (2.54)
.024(0.60) .014(0.35)
C C
Dimensions in inches and (millimeters)
Electrical Characteristics o
Characteristic Pea...
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