2SC5241

isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V(Min) ·Fast Switching Speed ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 600 VCEO Collector-Emitter Voltage 450 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 5 ICM Collector Current-Peak 10 IB Base Current-Continuous 2 IBM Base Current-Peak 4 PT Total Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 UNIT V V V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 4.16 ℃/W 2SC5241 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A ICBO Collector Cutoff Current At rated Voltage ICEO Collector Cutoff Current At rated Voltage IEBO Emitter Cutoff Current At rated Voltage hFE-1 DC Current Gain IC=2.5A ; VCE= 5V hFE-2 DC Current Gain IC= 1mA ...